IRF614 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

比赛名单

IRF614

Power MOSFET

Vishay Semiconductors 

IRF614, SiHF614

Vishay Siliconix

300

VGS = 0 V, f = 1 MHz

250

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

Coss = Cds + Cgd

200

Ciss

150

100

Coss

50

Crss

0

100

91025_05

101

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

101

150 °C

100

25 °C

0.5

91025_07

VGS = 0 V

0.7

0.9

1.1

1.3

1.5

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

ID = 2.7 A

16

VDS = 200 V

VDS = 125 V

12

VDS = 50 V

8

4

0

0

91025_06

For test circuit

see figure 13

2

4

6

8

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

102

5

2

10

5

2

1

5

2

0.1

1

91025_08

Operation in this area limited

by RDS(on)

100 µs

1 ms

TC = 25 °C

TJ = 150 °C

Single Pulse

10 ms

2

5 10 2

5 102 2

5 103

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91025

S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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