BUK128-50DL,118 查看數據表（PDF） - Nexperia B.V. All rights reserved
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BUK128-50DL,118 Datasheet PDF : 7 Pages
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Philips Semiconductors
Logic level TOPFET
SMD version of BUK117-50DL
Product specification
BUK128-50DL
OUTPUT CHARACTERISTICS
Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
Off-state
VIS = 0 V
V(CL)DSS Drain-source clamping voltage ID = 10 mA
50
IDM = 1 A; tp ≤ 300 µs; δ ≤ 0.01
50
IDSS
Drain source leakage current VDS = 40 V
-
Tmb = 25 ˚C
-
On-state
IDM = 3 A; tp ≤ 300 µs; δ ≤ 0.01
RDS(ON)
Drain-source resistance
VIS ≥ 4.4 V
-
Tmb = 25 ˚C
-
VIS ≥ 4 V
-
Tmb = 25 ˚C
-
TYP.
-
60
-
0.1
-
68
-
72
MAX. UNIT
-
V
70
V
100 µA
10 µA
190 mΩ
100 mΩ
200 mΩ
105 mΩ
OVERLOAD CHARACTERISTICS
-40˚C ≤ Tmb ≤ 150˚C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
Short circuit load
ID
Drain current limiting
PD(TO)
TDSC
Overload protection
Overload power threshold
Characteristic time
VDS = 13 V
VIS = 5 V;
4.4 V ≤ VIS ≤ 5.5 V
Tmb = 25˚C
4 V ≤ VIS ≤ 5.5 V
VIS = 5 V;
Tmb = 25˚C
device trips if PD > PD(TO)
which determines trip time1
Overtemperature protection
Tj(TO)
Threshold junction
temperature2
MIN. TYP. MAX. UNIT
8
12 16
A
6
-
18
A
5
-
18
A
20 55 80 W
200 350 600 µs
150 170 -
˚C
1 Trip time td sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO) ].
2 This is independent of the dV/dt of input voltage VIS.
May 2001
3
Rev 1.800
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