CR8PM-12A-A8(2010) 查看數據表（PDF） - Renesas Electronics
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CR8PM-12A-A8 Datasheet PDF : 7 Pages
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CR8PM-12A
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Holding Current vs.
Junction Temperature
103
7
Typical Example
5
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140
Tj = 125°C
120
100
80
60
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Turn-Off Time vs.
Junction Temperature
80
IT = 8A,
70 – di/dt = 5A/μs,
VD = 300V,
60 dv/dt = 20V/μs,
VR = 50V
50
40
30
Typical Example
20
10
Distribution
0
0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7 Typical Example
5
3
2
102
7
5
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Gate Current Pulse Width (μs)
R07DS0116EJ0200 Rev.2.00
Sep 13, 2010
Page 5 of 6
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