SLD114VS 查看數據表（PDF） - Sony Semiconductor
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SLD114VS Datasheet PDF : 6 Pages
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SLD114VS
Optical and Electrical Characteristics (Tc = 25°C)
Item
Symbol
Conditions
Threshold current
Ith
Operating current
Iop
PO = 3mW
Operating voltage
Vop
PO = 3mW
Wavelength
λ
PO = 3mW
Radiation
angle
Perpendicular θ⊥
Parallel
θ//
PO = 3mW
Positional
accuracy
Position
Angle
∆X, ∆Y, ∆Z
∆φ⊥
∆φ//
PO = 3mW
Differential efficiency
ηD
PO = 3mW
Astigmatism
As
PO = 3mW
Monitor current
Im
PO = 3mW, Vr = 5V
Droop
∆P
PO = 3mW
Tc: Case temperature
Min. Typ. Max. Unit
10
25
45
mA
20
40
60
mA
—
1.9 2.5
V
760 780 800
nm
20
30
45 degree
6
10
15 degree
—
—
±80
µm
—
—
±3 degree
—
—
±2 degree
0.1 0.25 0.5 mW/mA
—
5
15
µm
0.3 0.5 1.2
mA
—
—
10
%
–2–
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