SLD233VL 查看數據表（PDF） - Sony Semiconductor

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SLD233VL

Index-Guided High Power AlGaAs Laser Diode

Sony Semiconductor 

SLD233VL

Index-Guided High Power AlGaAs Laser Diode

Description

The SLD233VL is a high power index-guided AlGaAs

laser diode.

M-274

Features

• Low noise

• Low power consumption

Applications

Pickups for MiniDisc recording/playback

Structure

• AlGaAs quantum well-structure laser diode

• PIN photodiode for optical power output monitor

Recommended Operating Optical Power Output

30mW

Absolute Maximum Ratings (Tc = 25°C)

• Optical power output PO

35 mW

• Reverse voltage

VR LD

2

V

PD 15

V

• Operating temperature Topr –10 to +60 °C

• Storage temperature Tstg –40 to +85 °C

Connection Diagram

3 COMMON

Pin Configuration

PD

2

LD

1

2

1

3

Bottom View

1. LD ANODE

2. PD ANODE

3. COMMON

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

–1–

E97940-PS

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