IRF5N3205(2002) 查看數據表（PDF） - International Rectifier

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IRF5N3205
(Rev.:2002)

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

IRF5N3205

1000

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

10

4.5V

1000

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

10

4.5V

 20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

 20µs PULSE WIDTH

TJ = 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

 TJ = 25 ° C

 TJ = 150° C

10

4.0

 V DS

20µs

=P1U255LVSE

WIDTH

5.0

6.0

7.0

8.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

2.0  ID = 55A

1.5

1.0

0.5

 VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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