NTE287 查看數據表（PDF） - NTE Electronics

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NTE287

Silicon Complementary Transistors High Voltage, General Purpose Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

NTE287 & NTE288

hFE

IC = 1mA, VCE = 10V

IC = 10mA, VCE = 10V

25 – –

40 – –

NTE287

NTE288

IC = 30mA, VCE = 10V

40 – –

25 – –

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Small–Signal Characteristics

VCE(sat) IC = 20mA, IB = 2mA

VBE(sat) IC = 20mA, IB = 2mA

– – 0.5 V

– – 0.9 V

Current Gain – Bandwidth Product

Collector–Base Capacitance

NTE287

fT IC = 10mA, VCE = 20V, f = 100MHz 50 –

Ccb

VCB = 20V, IE = 0, f = 1MHz

––

– MHz

3 pF

NTE288

– – 6 pF

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.135 (3.45) Min

.210

(5.33)

Max

Seating Plane

.500

(12.7)

Min

.021 (.445) Dia Max

.100 (2.54)

EBC

.050 (1.27)

.105 (2.67) Max

.205 (5.2) Max

.165

(4.2)

Max

.105 (2.67) Max

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