NTE2539 查看數據表（PDF） - NTE Electronics

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NTE2539

Silicon NPN Transistor High Voltage, High Speed Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Gain–Bandwidth Product

fT VCE = 10V, IC = 3.2A

Output Capacitance

Cob VCB = 10V, f = 1MHz

Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞

Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0

Collector–Emitter Sustaining Voltage VCEX(sus) IC = 10A, IB1 = 1A, IB2 = –4A,

L = 200µH Clamped

– 20

– 300

500 –

400 –

7–

400 –

– MHz

– pF

–V

–V

–V

–V

Turn–On Time

Storage Time

Fall Time

ton IC = 20A, IB1 = 4A, IB2 = –8A,

–

– 0.5 µs

tstg

RL = 10Ω, VCC = 200V

– – 2.5 µs

tf

– – 0.3 µs

.190 (4.82)

.615 (15.62)

.787

(20.0)

C

.591

(15.02)

.126

(3.22)

Dia

.787

(20.0)

B

C

E

.215 (5.47)

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