STF7N52K3(2008) 查看數據表（PDF） - STMicroelectronics

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STF7N52K3
(Rev.:2008)

N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET

STMicroelectronics 

STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 DPAK D²PAK TO-220FP

VDS

VGS

ID

ID

IDM (2)

PTOT

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

525

± 30

6.3

4

25

90

0.72

6.3 (1)

4(1)

25 (1)

25

0.2

V

V

A

A

A

W

W/°C

Gate source ESD(HBM-C = 100 pF,

VESD(G-S) R = 1.5 kΩ)

dv/dt (3) Peak diode recovery voltage slope

2500

TBD

V

V/ns

Insulation withstand voltage (RMS) from all

VISO three leads to external heat sink

--

(t = 1 s; TC = 25 °C)

2500

V

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited by package

2. Pulse width limited by safe operating area

3. ISD ≤ 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS.

Table 3. Thermal data

Symbol

Parameter

-55 to 150

°C

150

°C

TO-220 DPAK D²PAK TO-220FP Unit

Rthj-case

Rthj-pcb

Rthj-amb

Tl

Thermal resistance junction-case max

Thermal resistance junction-pcb max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

purpose

1.39

--

50 30

62.5 --

--

300

5

°C/W

--

°C/W

62.5 °C/W

°C

Table 4.

Symbol

Avalanche characteristics

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

6.3

A

Single pulse avalanche energy

EAS (starting Tj = 25°C, ID = IAR, VDD = 50V)

TBD

mJ

3/15

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