STF7N52K3 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

STF7N52K3

N-channel 525 V, 0.84 Ω, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET

STMicroelectronics 

STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 DPAK D²PAK TO-220FP

VDS Drain-source voltage (VGS = 0)

VGS Gate- source voltage

ID Drain current (continuous) at TC = 25 °C

ID

IDM (2)

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

Single pulse avalanche energy

EAS (starting Tj = 25°C, ID = IAR, VDD = 50V)

Gate source ESD(HBM-C = 100 pF,

VESD(G-S) R = 1.5 kΩ)

dv/dt (3) Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited by package

2. Pulse width limited by safe operating area

3. ISD ≤ 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS.

525

± 30

6.2

4.5

24.8

90

6.2

V

V

6.2 (1)

A

4.5 (1)

A

24.8 (1)

A

25

W

A

100

mJ

2500

12

V

V/ns

2500

V

-55 to 150

°C

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220 DPAK D²PAK TO-220FP

Rthj-case Thermal resistance junction-case max

Rthj-pcb Thermal resistance junction-pcb max

Rthj-amb Thermal resistance junction-ambient max

Tl

Maximum lead temperature for soldering

purpose

62.5

1.39

50

30

300

5

°C/W

°C/W

62.5 °C/W

°C

Doc ID 14896 Rev 2

3/18

Share Link: