FDB9406_F085 查看數據表（PDF） - Fairchild Semiconductor
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FDB9406_F085 Datasheet PDF : 6 Pages
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Typical Characteristics
10000
1000
100
100us
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
1ms
10ms
DC
TC = 25oC
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
300
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
250
VDD = 5V
200
TJ = 175oC
150
TJ = 25oC
100
50
TJ = -55oC
0
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
1000
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 150oC
STARTING TJ = 25oC
1
1E-3
0.01 0.1
1
10 100
tAV, TIME IN AVALANCHE (ms)
1000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
300
VGS = 0 V
100
TJ = 175 oC
10
TJ = 25 oC
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Forward Diode Characteristics
350
280
210
140
V GS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
5V
70
0
0.0
80μs PULSE WIDTH
Tj=25oC
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
350
280
210
140
VGS
15V5T.5oVp
10V
5V
8V
7V
6V
5.5V
5V Bottom
70
80μs PULSE WIDTH
Tj=175oC
0
0.0
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Saturation Characteristics
FDB9406_F085 Rev. C1
4
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