NTE6810 查看數據表（PDF） - NTE Electronics

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NTE6810

Integrated Circuit 128 x 8–Bit Static Random Access Memory (SRAM)

NTE Electronics 

Address

CS

CS

R/W

Data In

tAS

tRCS

Read Cycle Timing

tcyc(R)

tacc

tDDR

tAH

tRH

tDHA

tDHR

tH

Data Valid

Note 1. Voltage levels shown are VL ≤ 0.4V, VH ≥ 2.4V, unless otherwise specified.

Note 2. Measurement pointas shown are 0.8V and 2.0V, unless otherwise specified.

Note 3. CS and CS have same timing.

Write Cycle Timing

= Don’t Care

Address

CS

CS

R/W

Data In

tAS

tWCS

tcyc(W)

tCS

tAH

tWH

tDSW

tH

Data in Stable

Note 1. Voltage levels shown are VL ≤ 0.4V, VH ≥ 2.4V, unless otherwise specified.

Note 2. Measurement pointas shown are 0.8V and 2.0V, unless otherwise specified.

Note 3. CS and CS have same timing.

= Don’t Care

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