60T03GH 查看數據表（PDF） - Silicon Standard Corp.
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60T03GH Datasheet PDF : 5 Pages
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SSM60T03GH,J
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
∆ BV DSS/∆ T j
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-source breakdown voltage
VGS=0V, ID=250uA
Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA
Static drain-source on-resistance
VGS=10V, ID=20A
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS=4.5V, ID=15A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V, Tj=175°C
VGS= ±20V
ID=20A
VDS=20V
VGS=4.5V
VDS=15V
ID=20A
RG=3.3Ω , VGS=10V
RD=0.75Ω
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
30 -
-
V
- 0.026 - V/°C
-
- 12 mΩ
-
- 25 mΩ
1
-
3V
- 25 -
S
-
-
1 uA
-
- 250 uA
-
- ±100 nA
- 11.6 - nC
- 3.9 - nC
-
7
- nC
- 8.8 - ns
- 57.5 - ns
- 18.5 - ns
- 6.4 - ns
- 1135 - pF
- 200 - pF
- 135 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward voltage2
Reverse-recovery time2
Reverse-recovery charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ. Max. Units
- 1.3 V
23.3 - ns
16 - nC
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25Ω , IAS=24A.
10/16/2005 Rev.3.1
www.SiliconStandard.com
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