SSM60T03GJ 查看數據表（PDF） - Silicon Standard Corp.
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SSM60T03GJ Datasheet PDF : 5 Pages
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125
T C =25 o C
100
75
50
25
10V
8.0V
6.0V
5.0V
V G =4.0V
0
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
80
I D =20A
T C =25 ° C
60
90
T C =175 o C
60
SSM60T03GH,J
10V
8.0V
6.0V
5.0V
30
V G =4.0V
0
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =20A
V G =10V
1.6
40
1.2
20
0.8
0
3
5
7
9
11
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
100
10
T j =175 o C
1
T j =25 o C
0.4
-50
25
100
175
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.8
2.3
1.8
1.3
0.8
0.1
0
0.5
1
1.5
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.3
-50
25
100
175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
10/16/2005 Rev.3.1
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