STF7NM60N 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

STF7NM60N

N-channel 600 V, 5 A, 0.84 Ω, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = Max rating

drain current (VGS = 0) VDS = Max rating, TC=125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

Gate threshold voltage VDS = VGS, ID = 250 µA

Static drain-source on

resistance

VGS = 10 V, ID = 2.5 A

Min. Typ. Max. Unit

600

V

1 µA

100 µA

100 nA

2

3

4

V

0.84 0.9 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

363

pF

-

24.6

-

pF

1.1

pF

Coss

(1)

eq.

Output equivalent

capacitance

VDS = 0 to 480 V, VGS = 0

-

130

- pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

5.4

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 5 A,

Qgs Gate-source charge VGS = 10 V

Qgd Gate-drain charge

(see Figure 18)

14

nC

-

2.7

- nC

7.7

nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

4/17

Doc ID 16472 Rev 4

Share Link: