015N04N 查看數據表（PDF） - Infineon Technologies
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015N04N Datasheet PDF : 10 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=100 A; V GS=10 V
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=1mA
IPP015N04N G
IPB015N04N G
3
5
2.5
4
2
3
98 %
1.5
typ
2
1
1
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60
-20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
105
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
25 °C, 98%
104
Ciss
Coss
103
Crss
102
100
25 °C
175 °C
10
175 °C, 98%
101
0
Rev. 2.2
10
20
V DS [V]
1
30
0.0
page 6
0.5
1.0
1.5
V SD [V]
2.0
2009-11-16
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