CY7C1463AV33 查看數據表（PDF） - Cypress Semiconductor
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产品描述 (功能)
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CY7C1463AV33
Cypress Semiconductor
CY7C1463AV33 Datasheet PDF : 29 Pages
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CY7C1461AV33
CY7C1463AV33
CY7C1465AV33
Pin Definitions (continued)
Name
TDI
TMS
TCK
I/O
JTAG serial
input
Synchronous
JTAG serial
input
Synchronous
JTAG-Clock
NC
N/A
NC/72M
N/A
NC/144M
N/A
NC/288M
N/A
NC/576M
N/A
NC/1G
N/A
Description
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG
feature is not being utilized, this pin can be left floating or connected to VDD through
a pull up resistor. This pin is not available on TQFP packages.
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG
feature is not being utilized, this pin can be disconnected or connected to VDD. This
pin is not available on TQFP packages.
Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin
must be connected to VSS. This pin is not available on TQFP packages.
No Connects. Not internally connected to the die.
Not connected to the die. Can be tied to any voltage level.
Not connected to the die. Can be tied to any voltage level.
Not connected to the die. Can be tied to any voltage level.
Not connected to the die. Can be tied to any voltage level.
Not connected to the die. Can be tied to any voltage level.
Functional Overview
The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a
synchronous flow-through burst SRAM designed specifically
to eliminate wait states during Write-Read transitions. All
synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock signal is qualified with
the Clock Enable input signal (CEN). If CEN is HIGH, the clock
signal is not recognized and all internal states are maintained.
All synchronous operations are qualified with CEN. Maximum
access delay from the clock rise (tCDV) is 6.5 ns (133-MHz
device).
Accesses can be initiated by asserting all three Chip Enables
(CE1, CE2, CE3) active at the rising edge of the clock. If Clock
Enable (CEN) is active LOW and ADV/LD is asserted LOW,
the address presented to the device will be latched. The
access can either be a read or write operation, depending on
the status of the Write Enable (WE). BWX can be used to
conduct byte write operations.
Write operations are qualified by the Write Enable (WE). All
writes are simplified with on-chip synchronous self-timed write
circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) simplify depth expansion.
All operations (Reads, Writes, and Deselects) are pipelined.
ADV/LD should be driven LOW once the device has been
deselected in order to load a new address for the next
operation.
Single Read Accesses
A read access is initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,
and CE3 are ALL asserted active, (3) the Write Enable input
signal WE is deasserted HIGH, and 4) ADV/LD is asserted
LOW. The address presented to the address inputs is latched
into the Address Register and presented to the memory array
and control logic. The control logic determines that a read
access is in progress and allows the requested data to
propagate to the output buffers. The data is available within 6.5
ns (133-MHz device) provided OE is active LOW. After the first
clock of the read access, the output buffers are controlled by
OE and the internal control logic. OE must be driven LOW in
order for the device to drive out the requested data. On the
subsequent clock, another operation (Read/Write/Deselect)
can be initiated. When the SRAM is deselected at clock rise
by one of the chip enable signals, its output will be tri-stated
immediately.
Burst Read Accesses
The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 has
an on-chip burst counter that allows the user the ability to
supply a single address and conduct up to four Reads without
reasserting the address inputs. ADV/LD must be driven LOW
in order to load a new address into the SRAM, as described in
the Single Read Access section above. The sequence of the
burst counter is determined by the MODE input signal. A LOW
input on MODE selects a linear burst mode, a HIGH selects an
interleaved burst sequence. Both burst counters use A0 and
A1 in the burst sequence, and will wrap around when incre-
mented sufficiently. A HIGH input on ADV/LD will increment
the internal burst counter regardless of the state of chip enable
inputs or WE. WE is latched at the beginning of a burst cycle.
Therefore, the type of access (Read or Write) is maintained
throughout the burst sequence.
Single Write Accesses
Write access are initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,
and CE3 are ALL asserted active, and (3) the write signal WE
is asserted LOW. The address presented to the address bus
is loaded into the Address Register. The write signals are
latched into the Control Logic block. The data lines are
automatically tri-stated regardless of the state of the OE input
signal. This allows the external logic to present the data on
DQs and DQPX.
On the next clock rise the data presented to DQs and DQPX
(or a subset for byte write operations, see truth table for
details) inputs is latched into the device and the write is
complete. Additional accesses (Read/Write/Deselect) can be
initiated on this cycle.
The data written during the Write operation is controlled by
BWX signals. The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33
Document #: 38-05356 Rev. *E
Page 9 of 29
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