2DD2678-13 查看數據表（PDF） - Diodes Incorporated.
零件编号
产品描述 (功能)
比赛名单
2DD2678-13 Datasheet PDF : 4 Pages
| |||
2DD2678
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Features
Mechanical Data
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
COLLECTOR
2,4
3E
Top View
1
BASE
3
EMITTER
Device Schematic
C4
2C
1B
TOP VIEW
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
15
12
6
6
3
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol Min
Typ
Max
V(BR)CBO
15
⎯
⎯
V(BR)CEO
12
⎯
⎯
V(BR)EBO
6
⎯
⎯
ICBO
⎯
⎯
0.1
IEBO
⎯
⎯
0.1
VCE(SAT)
⎯
90
250
hFE
270
⎯
680
Unit
V
V
V
μA
μA
mV
⎯
Output Capacitance
Cobo
⎯
26
⎯
pF
Current Gain-Bandwidth Product
fT
⎯
170
⎯
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Conditions
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 15V, IE = 0
VEB = 6V, IC = 0
IC = 1.5A, IB = 30mA
VCE = 2V, IC = 500mA
VCB = 10V, IE = 0,
f = 1MHz
VCE = 2V, IC = 100mA,
f = 100MHz
2DD2678
Document number: DS31637 Rev. 3 - 2
1 of 4
www.diodes.com
April 2010
© Diodes Incorporated
Share Link: 