TGA1319C 查看數據表（PDF） - TriQuint Semiconductor
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TGA1319C Datasheet PDF : 7 Pages
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MAXIMUM RATINGS
Product Data Sheet
August 5, 2008
TGA1319C
SYMBOL
V+
I+
PARAMETER 4/
POSITIVE SUPPLY VOLTAGE
POSITIVE SUPPLY CURRENT
I-
NEGATIVE GATE CURRENT
PIN
INPUT CONTINUOUS WAVE POWER
PD
POWER DISSIPATION
TCH
OPERATING CHANNEL TEMPERATURE
TM
MOUNTING TEMPERATURE
(30 SECONDS)
TSTG STORAGE TEMPERATURE
VALUE
9V
80 mA
5.28 mA
15 dBm
.72 W
150 0C
320 0C
-65 to 150 0C
NOTES
1/
2/ 3/
1/ Total current for all stages.
2/ These ratings apply to each individual FET.
3/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/ These ratings represent the maximum operable values for the device.
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Symbol
Idss
VP
BVGS
BVGD
Parameter
Saturated Drain Current
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
---
-1.5
---
---
Maximum
---
-0.5
---
---
Value
mA
V
V
V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Vd = 5 V, Id1 = 60 mA
Symbol Parameter
Test Condition
Gain
NF
PWR
Small Signal
Gain
Noise Figure
Output Power
@ P1dB
F = 21 – 27 GHz
F = 21 – 25 GHz
F = 26 – 26.5 GHz
F = 21 – 26 GHz
F = 27 GHz
Limit
Units
Min Typ Max
19
--- dB
---
2.5 dB
---
2
10
--- dBm
9
---
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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