HY1707 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

比赛名单

HY1707

N-Channel Enhancement Mode MOSFET

Unspecified 

HY1707P/M/B/I/MF/PS/PM

Electrical Characteristics (Cont.)

(T

C

=

25°C

Unless

Otherwise

Noted)

Symbol

Parameter

Test Conditions

Dynamic Characteristics

RG Gate Resistance

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(ON) Turn-on Delay Time

Tr Turn-on Rise Time

td(OFF) Turn-off Delay Time

Tf Turn-off Fall Time

Gate Charge Characteristics

VGS=0V,VDS=0V,F=1MHz

VGS=0V,

VDS=25V,

Frequency=1.0MHz

VDD=35V, RG =3 Ω,

IDS=40A, VGS=10V,

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=55V, VGS=10V,

IDS=40A

Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.

HY1707

Min. Typ. Max.

-

0.9

-

- 4550 -

- 900 -

- 280 -

-

21 39

-

10 19

-

25 48

-

31 57

-

88

-

-

20

-

-

21

-

Unit

Ω

pF

ns

nC

3

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