IRS21867SPBF 查看數據表（PDF） - International Rectifier

零件编号

产品描述 (功能)

比赛名单

IRS21867SPBF

HIGH AND LOW SIDE DRIVER

International Rectifier 

IRS21867S

Application Information and Additional Details

Informations regarding the following topics are included as subsections within this section of the datasheet.

• IGBT/MOSFET Gate Drive

• Switching and Timing Relationships

• Matched Propagation Delays

• Input Logic Compatibility

• Undervoltage Lockout Protection

• Negative VS Transient SOA

• PCB Layout Tips

• Additional Documentation

IGBT/MOSFET Gate Drive

The IRS21867 HVIC is designed to drive MOSFET or IGBT power devices. Figures 1 and 2 illustrate several

parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive

the gate of the power switch, is defined as IO. The voltage that drives the gate of the external power switch is

defined as VHO for the high-side power switch and VLO for the low-side power switch; this parameter is sometimes

generically called VOUT and in this case does not differentiate between the high-side or low-side output voltage.

VB

(or VCC)

HO

(or LO)

VS

(or COM)

IO+

+

VHO (or VLO)

-

Figure 1: HVIC sourcing current

VB

(or VCC)

HO

(or LO)

IO-

VS

(or COM)

Figure 2: HVIC sinking current

www.irf.com

© 2010 International Rectifier

9

Share Link: