TC7MP245FK 查看數據表（PDF） - Toshiba

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TC7MP245FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

DC Characteristics (Ta=-40 to 85℃, 1.65V≦Vcc<2.3V)

TC7MP245FK/FTG

Parameter

Symbol

Test Condition

Vcc(V)

Min

Max

Unit

DC input

voltage

Output voltage

(A bus)

H-level

L-level

H-level

L-level

VIH

VIL

V0HA

V0LA

Output voltage

(B bus)

H-level

L-level

V0HB

V0LB

Input leakage current(DIR,/OE)

IIN

Power off leakage current

IOFF

IOZA

3-state output off-state current

IOZB

-

1.65 to 2.3

Vcc×0.7

-

V

-

1.65 to 2.3

-

Vcc×0.2

VIN=

IOHA=-100uA

1.65

Vcc-0.2

-

VIH

IOHA=-2mA

1.65

1.3

-

V

VIN=

VIL

IOLA=2mA

1.65

-

0.2

VIN=

IOHB=-100uA

1.65

Vcc-0.2

-

VIH

IOHB=-4mA

1.65

1.3

-

V

VIN=

VIL

IOLB=4mA

1.65

-

0.2

VIN=0 to 3.6V

1.65 to 2.3

-

A,DIR,/OE=0 to 3.6V

0

-

VINA=VIH or VIL

1.65 to 2.3

-

Vout=0 to 3.6V

VINB=VIH or VIL

Vout=0 or VCC

1.65 to 2.3

-

±5.0

μA

5.0

μA

±5.0

μA

±5.0

μA

Quiescent supply current

ICC

VIN=VCC or GND

1.65 to 2.3

-

5.0

μA

Bushold input minimum drive hold

current

Bushold input over-drive current

to change state

(Note)

II(HOLD)

II(OD)

VIN=0.33V

VIN=1.16V

VIN= “L”→”H”

VIN= “H”→”L”

20

1.65

-20

-

μA

-

-

300

1.95

μA

-

-300

Note: It is a necessary electric current to change the input in "L" or "H".

6

2007-10-19

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