DMP3030SN-7(2007) 查看數據表（PDF） - Diodes Incorporated.

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DMP3030SN-7
(Rev.:2007)

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes Incorporated. 

3

-10V

-5V

2.5

-4.5V

2

1.5

-4V

TA = 25°C

-3.5V

1

-3V

0.5

VGS = -2.5V

0

0

1

2

3

4

5

-VDS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

0.8

0.6

ID = -0.4A

ID = -0.7A

0.4

0.2

DMP3030SN

3

VDS = 10V

2.5

2

1.5

1

0.5

0

0

1

TJ = 125°C

TJ = 25°C

TJ = -55°C

1

2

3

4

5

-VGS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

TJ = 25°C

VGS = -4.5V

VGS = -10V

0

0

0.8

2

4

6

8

10

-VGS, GATE-SOURCE VOLTAGE (V)

Fig. 3 On-Resistance vs. Gate Voltage

0.6

ID = -0.4A, -0.7A

0.4

VGS = -4.5V

0.2

VGS = -10V

ID = -0.7A

0

-50

0

50

100

150

TA, AMBIENT TEMPERATURE (°C)

Fig. 5 On-Resistance Variation with Temperature

0.1

0

0.5

1

1.5

2

2.5

3

-ID, DRAIN CURRENT (A)

Fig. 4 On-Resistance vs. Drain Current

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

-50

0

50

100

150

TA, AMBIENT TEMPERATURE (°C)

Fig. 6 Gate-Source Threshold Voltage with Temperature

DMP3030SN

Document number: DS30787 Rev. 3 - 2

2 of 4

www.diodes.com

November 2007

© Diodes Incorporated

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