IHW30N160R2 查看數據表（PDF） - Infineon Technologies

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IHW30N160R2

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode

Infineon Technologies 

IHW30N160R2

Soft Switching Series

td(off)

1000ns

td(off)

100ns

tf

100ns

tf

10ns

0A 10A 20A 30A 40A 50A 60A 70A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=10Ω,

Dynamic test circuit in Figure E)

10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, IC=30A,

Dynamic test circuit in Figure E)

100ns

td(off)

6V

tf

5V

4V

3V

max.

typ.

min.

10ns

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=30A, RG=10Ω,

Dynamic test circuit in Figure E)

2V

-50°C

0°C

50°C

100°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as a

function of junction temperature

(IC = 0.15mA)

Power Semiconductors

6

Rev. 2.1 Nov 09

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