SIA811ADJ-T1-GE3 查看數據表（PDF） - Vishay Semiconductors
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SIA811ADJ-T1-GE3 Datasheet PDF : 12 Pages
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www.vishay.com
SiA811ADJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = -1 A, VGS = 0 V
IF = -4.5 A, di/dt = 100 A/μs,
TJ = 25 °C
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
MIN. TYP. MAX. UNIT
-
-
-4.5
A
-
-
-8
-
-0.8
-1.2
V
-
30
60
ns
-
20
40
nC
-
15
-
15
-
ns
-
SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Forward voltage drop
VF
IF = 1 A
IF = 1 A, TJ = 125 °C
-
0.41
0.45
V
-
0.36
0.41
Maximum reverse leakage current
Irm
Junction capacitance
CT
Vr = 5 V
Vr = 5 V, TJ = 85 °C
Vr = 20 V
Vr = 20 V, TJ = 85 °C
Vr = 20 V, TJ = 125 °C
Vr = 10 V
-
0.015 0.080
-
0.5
5
-
0.02
0.10
mA
-
0.7
7
-
5
50
-
60
-
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S-82482-Rev. A, 13-Oct-08
3
Document Number: 68955
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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