SIA811ADJ-T1-GE3 查看數據表（PDF） - Vishay Semiconductors
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SIA811ADJ-T1-GE3 Datasheet PDF : 12 Pages
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www.vishay.com
MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SiA811ADJ
Vishay Siliconix
10
2.0
8
VGS = 5 thru 2.5 V
VGS = 2 V
6
4
VGS = 1.5 V
2
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.30
0.25
0.20
0.15
VGS = 1.8 V
VGS = 2.5 V
0.10
0.05
VGS = 4.5 V
0.00
0
2
4
6
8
10
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1.5
1.0
0.5
0.0
0.0
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
700
600
500
400
Ciss
300
200
100
0
0
Coss
Crss
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
8
ID = 3.5 A
6
VDS = 10 V
VDS = 5 V
4
VDS = 15 V
2
0
0
2
4
6
8
10
Qg - Total Gate Charge (nC)
Gate Charge
1.6
ID = 2.8 A
1.4
1.2
1.0 VGS = 4.5 V
0.8
VGS = 1.8 V
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S-82482-Rev. A, 13-Oct-08
4
Document Number: 68955
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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