SIA811ADJ-T1-GE3 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

比赛名单

SIA811ADJ-T1-GE3

P-Channel 20 V (D-S) MOSFET with Schottky Diode

Vishay Semiconductors 

www.vishay.com

MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

SiA811ADJ

Vishay Siliconix

10

TJ = 150 °C

1

TJ = 25 °C

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.5

ID = 2.8 A

0.4

0.3

0.2

TJ = 125 °C

0.1

TJ = 25 °C

0.0

0

1

2

3

4

5

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

0.4

0.3

ID = 250 µA

0.2

ID = 1 mA

0.1

0.0

- 0.1

- 0.2

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

10

* Limited by RDS(on)

20

15

10

5

0

0.001 0.01

0.1

1

10

Time (s)

100 1000

Single Pulse Power, Junction-to-Ambient

100 µs

1

1 ms

10 ms

100 ms

0.1

1 s, 10 s

100 s, DC

TA = 25 °C

Single Pulse

BVDSS Limited

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Case

S-82482-Rev. A, 13-Oct-08

5

Document Number: 68955

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: