SIA811ADJ-T1-GE3 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

比赛名单

SIA811ADJ-T1-GE3

P-Channel 20 V (D-S) MOSFET with Schottky Diode

Vishay Semiconductors 

www.vishay.com

MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

8

8

SiA811ADJ

Vishay Siliconix

6

6

Package Limited

4

4

2

2

0

0

25

50

75

100 125 150

TC - Case Temperature (°C)

Current Derating a

0

0

25

50

75

100 125 150

TC - Case Temperature (°C)

Power Derating

Note

a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit.

S-82482-Rev. A, 13-Oct-08

6

Document Number: 68955

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: