2SK4075B-ZK-E2-AY 查看數據表（PDF） - Renesas Electronics
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2SK4075B-ZK-E2-AY Datasheet PDF : 10 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
12
ID = 13 A, VGS = 4.5 V
10
8
6
ID = 25 A, VGS = 10 V
4
2
0
-100 -50 0
Pulsed
50 100 150 200
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(of f )
tr
10
td( on)
tf
1
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
100
4.5 V
10
0V
1
0.1
0.01
0
Pulsed
0.5
1
VF(S-D) - Source to Drain Voltage - V
2SK4075B
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss
1000
100
Coss
Cr ss
VGS = 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
VDD = 32 V
20 V
40
8V
8
V GS
30
6
20
4
10
0
0
2
V DS
ID = 50 A
Pulsed
0
10
20
30
40
50
QG - Gate Chage - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
1
10
100
IF – Diode Forward Current - A
Data Sheet D20258EJ1V0DS
5
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