D2000 查看數據表（PDF） - Panasonic Corporation
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D2000 Datasheet PDF : 4 Pages
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Power Transistors
2SD2000
Silicon NPN triple diffusion planar type
For power switching
I Features
• High-speed switching
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector power dissipation PC
• Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
8
A
Collector current
IC
4
A
Base current
IB
1
A
Collector power TC = 25°C
PC
35
W
dissipation
Ta = 25°C
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F Package
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter to base current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1 *
hFE2
VBE(sat)
VCE(sat)
fT
ton
tstg
tf
VCB = 80 V, IE = 0
VEB = 6 V, IC = 0
IC = 25 mA, IB = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 4 A
VCE = 4 V, IC = 4 A
IC = 4 A, IB = 0.4 A
VCE = 12 V, IC = 0.2 A, f = 10 MHz
IC = 4 A, IB1 = 0.4 A, IB2 = − 0.4 A,
VCC = 50 V
Note) *: Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Min Typ Max Unit
100 µA
100 µA
60
V
70
250
20
2.0
V
1.5
V
80
MHz
0.3
µs
1.0
µs
0.2
µs
1
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