2SB649 查看數據表（PDF） - SavantIC Semiconductor

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产品描述 (功能)

比赛名单

2SB649

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB649 2SB649A

DESCRIPTION

·With TO-126 package

·Complement to type 2SD669/669A

·High breakdown voltage VCEO:-120/-160V

·High current -1.5A

·Low saturation voltage,excellent hFE linearity

APPLICATIONS

·For low-frequency power

amplifier applications

PINNING

PIN

1

2

3

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25 )

SYMBOL

PARAMETER

CONDITIONS

VCBO

Collector-base voltage

2SB649

2SB649A

Open emitter

VCEO

Collector-emitter voltage

2SB649

2SB649A

Open base

VEBO

IC

ICM

PD

Tj

Tstg

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Total power dissipation

Junction temperature

Storage temperature

Open collector

Ta=25

TC=25

VALUE

-180

-180

-120

-160

-5

-1.5

-3

1

20

150

-55~150

UNIT

V

V

V

A

A

W

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