MCR72 查看數據表（PDF） - New Jersey Semiconductor
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MCR72 Datasheet PDF : 2 Pages
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MCR72 Series
MAXIMUM RATINGS — continued
Rating
Symbol
Value
Unit
Storage Temperature Range
Mounting Torque
Tstg
-40to + 150
°C
—
8
in. Ib.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ReJC
2.2
°C/W
R0JA
60
°c/w
ELECTRICAL CHARACTERISTICS (Tc = 25°C, RQK = 1 kn unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward or Reverse Blocking Current 1)
(VAK = Rated VDRM °r VRRM) TJ = 25°C
Tj = 110°C
On-State Voltage
(IjM = 16 A Peak, Pulse Width ss 1 ms, Duty Cycle s= 2%)
!DRM. !RRM
—
—
10
uA
—
—
500
MA
VTM
—
1.7
2
Volts
Gate Trigger Current (Continuous dc)(2)
(VD = 12V, R|_ = 100 £2)
IGT
—
30
200
uA
Gate Trigger Voltage (Continuous dc)
(VD = 12V, RL = 100 Q)
(VD = Rated VDRM. RL = 1°k".TJ = 110°C)
Holding Current
(VD = 12V, ITM = 100 mA)
VGT
Volts
—
0.5
1.5
0.1
—
—
IH
—
—
6
mA
Critical Rate-of-Rise of Forward Blocking Voltage
(VD = Rated VDRM. TJ = 110°C, Exponential Waveform)
dv/dt
—
10
—
V/us
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 16 A, IG = 2 mA)
tgt
—
1
—
us
1. Ratings apply for negative gate voltage or RGK = 1 kQ. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
2. Does not include RQK current.
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