BF421 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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BF421 Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BF421
BF423
TRANSISTOR （PNP）
TO— 92
FEATURES
Power dissipation
PCM: 0.625W （Tamb=25℃）
Collector current
ICM: -50mA
Collector-base voltage
V(BR)CBO : BF421 -300 V
BF423 -250 V
1. EMITTER
2. COLLECTOR
3. BASE
123
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Collector-base breakdown voltage BF421
BF423
Collector-emitter breakdown voltage BF421
BF423
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol Test conditions
VCBO Ic=-100μA ， IE=0
VCEO IC= -1mA , IB=0
VEBO
IE=-100μA， IC=0
ICBO
VCB=-200 V , IE=0
MIN
TYP MAX UNIT
-300
-250
V
-300
-250
V
-5
V
-0.01 μA
IEBO
VEB=-5 V , IC=0
-0.05 μA
hFE
VCE=-20 V, IC=-25m A
50
VCE(sat) IC=-30 mA, IB=- 5mA
-0.6
V
fT
VCE=-10V, IC= -10mA
60
MHz
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