SSM9972GP 查看數據表（PDF） - Silicon Standard Corp.

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比赛名单

SSM9972GP

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Silicon Standard Corp. 

200

10V

7.0V

150

5.0V

100

4.5V

50

T C =25 o C

V G =3.0V

0

0

2

4

6

8

10

12

14

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20

I D = 25 A

T C =25 o C

18

16

14

2

4

6

8

10

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

20

SSM9972GP,S

150

10V

7.0V

100

5.0V

4.5V

50

T C = 150 o C

V G =3.0V

0

0

2

4

6

8

10

12

14

V DS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.6

I D =35A

1.4

V G =10V

1.2

1.0

0.8

0.6

-50

0

50

100

150

T j , Junction Temperature ( o C)

Fig 4. Normalized On-Resistance

vs. Junction Temperature

1.7

15

T j =150 o C

T j =25 o C

1.2

10

0.7

5

0

0

0.2

0.4

0.6

0.8

1

1.2

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic offf

Reverse Diode

0.2

-50

0

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage vs.

Junction Temperature

2/16/2005 Rev.1.1

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