9972GS 查看數據表（PDF） - Silicon Standard Corp.

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产品描述 (功能)

比赛名单

9972GS

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Silicon Standard Corp. 

12

I D = 35 A

10

V DS =48V

8

V DS =38V

V DS =30V

6

4

2

0

0

20

40

60

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

SSM9972GP,S

f=1.0MHz

10000

C iss

1000

C oss

C rss

100

1

5

9

13

17

21

25

29

V DS , Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance Characteristics

1000

100

100us

1ms

10

10ms

T C =25 o C

Single Pulse

1

0.1

1

10

100ms

DC

100

1000

V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

1

Duty factor=0.5

0.2

0.1

0.1

0.05

0.02

0.01

Single Pulse

PDM

t

T

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.01

0.00001

0.0001

0.001

0.01

0.1

1

10

t , Pulse Width (s)

Fig 10. Effective Transient Thermal Impedance

100

V DS =5V

80

T j =25 o C

60

T j =150 o C

40

VG

4.5V

QGS

QG

QGD

20

0

0

2

4

6

8

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Charge

Q

Fig 12. Gate Charge Waveform

2/16/2005 Rev.1.1

www.SiliconStandard.com

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