9972GR 查看數據表（PDF） - Advanced Power Electronics Corp
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9972GR Datasheet PDF : 4 Pages
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Advanced Power
Electronics Corp.
AP9972GR
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ Surface Mount Package
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
60V
18mΩ
60A
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
IAR
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Avalanche Current3
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
60
±25
60
38
230
89
0.7
30
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
A
℃
℃
Max.
Max.
Value
1.4
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200218051
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