2SA1235A 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SA1235A

SOT-23 Plastic-Encapsulate PNP Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate Transistors

2SA1235A TRANSISTOR（ PNP ）

FEATURES

SOT— 23

1. BASE

2. EMITTER

3. COLLECTOR

Power dissipation

PCM : 0.2

Collector current

W（Tamb=25℃）

ICM: -0.2

A

Collector-base voltage

V (BR) CBO: -60

V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃　

２．４

１．３

Unit : mm

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Symbol Test conditions

MIN

Collector-base breakdown voltage

V(BR) CBO IC = -100 μA， IE=0

-60

Collector-emitter breakdown voltage

V(BR) CEO IC = -100 μA， IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO IE= -100 μA， IC=0

-6

Collector cut-off current

ICBO

VCB= -60 V, IE =0

Emitter cut-off current

IEBO

VEB= -6V, IC =0

DC current gain

hFE（1） VCE= -6V, IC= -1mA

150

hFE（2） VCE= -6V, IC = -0.1mA

90

Collector-emitter saturation voltage

VCE (sat) IC=-100 mA, IB= -10mA

Base-emitter saturation voltage

VBE (sat) IC= -100mA, IB= -10mA

Transition frequency

Collector output capacitance

Noise figure

fT

VCE= -6V, IC = -10mA

180

Cob VCE=-6V， IE=0，f=1MHz

NF

VCE=-6 V ， IE=0.3mA, f=100Hz ，

RG=10K?

CLASSIFICATION OF hFE (1)

Rank

E

Range

150~300

Marking

M •E

F

250~500

M •F

MAX UNIT

V

V

V

-0.1 μA

-0.1 μA

500

-0.3

V

-1

V

MHz

5

dB

20 dB

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