2SC3150 查看數據表（PDF） - Inchange Semiconductor

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2SC3150

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3150

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞

800

V

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A; L= 500μH, IB= 1A

800

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

900

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

7

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A

2.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 1.5A; IB= 0.3A

1.5

V

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCB= 800V; IE=0

VEB= 5V; IC=0

10

μA

10

μA

hFE-1

DC Current Gain

IC= 0.2A ; VCE= 5V

10

40

hFE-2

DC Current Gain

IC= 1A ; VCE= 5V

8

COB

Output Capacitance

IE= 0 ; VCB= 10V; ftest=1.0MHz

60

pF

fT

Current-Gain—Bandwidth Product

IC= 0.2A ; VCE= 10V

15

MHz

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 2A , IB1= 0.4A; IB2= -0.8A

RL= 200Ω; VCC=400V

1.0 μs

3.0 μs

0.7 μs

‹ hFE-1 Classifications

K

L

M

10-20 15-30 20-40

isc Website：www.iscsemi.cn

2

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