SS8550 查看數據表（PDF） - TY Semiconductor

零件编号

产品描述 (功能)

比赛名单

SS8550

SOT-23 Plastic-Encapsulate PNP Transistors

TY Semiconductor 

Product specification

SOT-23 Plastic-Encapsulate Transistors

SS8550 TRANSISTOR (PNP)

FEATURES

 High Collector Current

 Complementary to SS8050

SOT–23

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

-40

VCEO Collector-Emitter Voltage

-25

VEBO Emitter-Base Voltage

-5

IC

Collector Current

-1.5

PC

Collector Power Dissipation

300

RΘJA Thermal Resistance From Junction To Ambient

417

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

A

mW

℃/W

℃

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Collector-base breakdown voltage

V(BR)CBO IC=-100µA, IE=0

Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO IE=-100µA, IC=0

Collector cut-off current

ICBO

VCB=-40V, IE=0

Collector cut-off current

ICEO

VCE=-20V, IB=0

Emitter cut-off current

IEBO

VEB=-5V, IC=0

DC current gain

hFE(1)

hFE(2)

VCE=-1V, IC=-100mA

VCE=-1V, IC=-800mA

Collector-emitter saturation voltage

VCE(sat) IC=-800mA, IB=-80mA

Base-emitter saturation voltage

VBE(sat) IC=-800mA, IB=-80mA

Base-emitter voltage

VBE

VCE=-1V, IC=-10mA

Transition frequency

fT

VCE=-10V,IC=-50mA , f=30MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

CLASSIFICATION OF hFE(1)

RANK

RANGE

MARKING

L

120–200

H

200–350

Y2

Min

Typ

Max Unit

-40

V

-25

V

-5

V

-100

nA

-100

nA

-100

nA

120

400

40

-0.5

V

-1.2

V

-1

V

100

MHz

20

pF

J

300–400

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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