SSM4501GSD 查看數據表（PDF） - Silicon Standard Corp.

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SSM4501GSD

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Silicon Standard Corp. 

P-Channel

40

T A =25 o C

30

20

10

-10V

-8.0V

-6.0V

-5.0V

V G = - 4. 0 V

0

0

1

2

3

4

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

SSM4501GSD

36

T A =150 o C

24

-10V

-8.0V

-6.0V

-5.0V

12

V G = - 4. 0 V

0

0

1

2

3

4

5

-V DS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

120

1.8

I D =-5.0A

T A =25 ℃

1.6

I D =-5.0A

V G = -10V

90

1.4

1.2

60

1

0.8

30

3

5

7

9

11

-V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

10

0.6

-50

0

50

100

150

T j , Junction Temperature ( o C)

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

3

2.5

1

2

T j =150 o C

T j =25 o C

1.5

0.1

1

0.5

0.01

0.1

0.4

0.7

1

1.3

-V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

0

-50

0

50

100

150

T j , Junction Temperature ( o C )

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

01/28/2008 Rev.1.00

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