L3100B 查看數據表（PDF） - STMicroelectronics
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L3100B Datasheet PDF : 8 Pages
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Figure 1 : Surge peak current versus overload
duration.
L3100B/L3100B1
Figure 2 : Relative variation of holding current
versus junction temperature.
ITSM(A)
60
50
40
30
20
10
0
1E-2
t(s)
1E-1
1E+0
1E+1
F=50Hz
Tj initial=25°C
1E+2
1E+3
1.2
1.1
1.0
0.9
0.8
0.7
0 10 20 30 40 50 60 70
Figure 3 : Relative variation of breakdown voltage
versus ambient temperature.
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0
10 20 30 40 50 60 70
Figure 4 : Junction capacitance versus reverse
applied voltage.
100
80
60
40
20
0
1
10
100
5/8
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