S40D60CE 查看數據表（PDF） - Mospec Semiconductor
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S40D60CE Datasheet PDF : 2 Pages
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MOSPEC
S40D30CE Thru S40D60CE
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊150℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
SCHOTTKY BARRIER
RECTIFIERS
40 AMPERES
30-60 VOLTS
TO-3P
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
S40D
Symbol
Unit
30CE 35CE 40CE 45CE 50CE 60CE
VRRM
VRWM 30 35 40 45 50 60
V
VR
RMS Reverse Voltage
VR(RMS) 21 25 28 32 35 42
V
Average Rectifier Forward Current
Total Device (Rated VR),TC=100℃
IF(AV)
20
40
A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
40
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
IFSM
350
A
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
TJ , TSTG
-65 to +150
℃
ELECTRIAL CHARACTERISTICS
Characteristic
S40D
Symbol
Unit
30CE 35CE 40CE 45CE 50CE 60CE
Maximum Instantaneous Forward Voltage
( IF =20 Amp TC = 25℃)
VF
( IF =20 Amp TC = 125℃)
0.57
0.45
0.65
V
0.55
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
IR
( Rated DC Voltage, TC = 125℃)
1.0
mA
60
DIM MILLIMETERS
MIN MAX
A 20.63 22.38
B 15.38 16.20
C
1.90 2.70
D
5.10 6.10
E 14.81 15.22
F 11.72 12.84
G 4.20 4.50
H
1.82 2.46
I
2.92 3.23
J
0.89 1.53
K
5.26 5.66
L 18.50 21.50
M 4.68 5.36
N
2.40 2.80
O 3.25 3.65
P
0.55 0.70
Common Cathode
Suffix “C”
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