A1201 查看數據表（PDF） - TY Semiconductor

零件编号

产品描述 (功能)

比赛名单

A1201

PNP SILICON TRANSISTOR

TY Semiconductor 

SMD Type

Product specification

2SA1201

Features

High Voltage : VCEO = -120V

High Transition Frequency : fT = 120MHz(typ.)

Small Flat Package

Complementary to 2SC2881

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Jumction temperature

Storage temperature

Symbol

Rating

Unit

VCEO

-120

V

VCBO

-120

V

VEBO

-5

V

IC

-800

mA

IB

-160

mA

PC

500

mW

Tj

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Emitter Cut-off Current

Collector Cut-off Current

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transtion Frequency

Collector Output Capacitance

Symbol

Testconditons

IEBO VEB = -5V , IC = 0

ICBO VCB = -120V , IE = 0

V(BR)CEO IC = -10mA , IB = 0

V(BR)EBO IE = -1mA , IC = 0

hFE VCE = -5V , IC = -100mA

VCE(sat) IC = -500mA , IB = -50mA

VBE VCE = -5V , IC = -500mA

fT VCE = -5V , IC = -100mA

Cob VCB = -10V , IE = 0 , f = 1MHz

Min Typ Max Unit

-0.1

A

-0.1

A

-120

V

-5

V

80

240

-1.0 V

-1.0 V

120

MHz

30 pF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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