UT62L6416BS-55LLE 查看數據表（PDF） - Utron Technology Inc
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UT62L6416BS-55LLE Datasheet PDF : 11 Pages
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UTRON
Preliminary Rev. 1.0
UT62L6416
64K X 16 BIT LOW POWER CMOS SRAM
DATA RETENTION CHARACTERISTICS (TA = 0℃ to 70℃ / -20℃ to 80℃(E))
PARAMETER
Vcc for Data Retention
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
SYMBOL
VDR
IDR
tCDR
tR
TEST CONDITION
MIN.
CE ≧ VCC-0.2V
1.5
Vcc=1.5V
-L -
CE ≧ VCC-0.2V - LL -
See Data Retention
0
Waveforms (below)
5
TYP.
-
1
0.5
-
MAX.
3.6
50
20
-
UNIT
V
µA
µA
ms
-
-
ms
DATA RETENTION WAVEFORM
VCC
CE
2.7V
tCDR
Data Retention Mode
VDR ≧ 1.5V
2.7V
tR
VSS
CE ≧ VCC -0.2V
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
7
P80073
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