BDP952 查看數據表（PDF） - Infineon Technologies
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BDP952 Datasheet PDF : 4 Pages
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PNP Silicon AF Power Transistors
For AF driver and output stages
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP951...BDP955 (NPN)
BDP952...BDP956
4
3
2
1
VPS05163
Type
BDP952
BDP954
BDP956
Marking
BDP 952
BDP 954
BDP 956
1=B
1=B
1=B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BDP952 BDP954 BDP956 Unit
80
100
120 V
100
120
140
5
5
5
3
A
5
200
mA
500
3
W
150
°C
-65 ... 150
RthJS
17
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Jul-06-2001
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