EN25F16-100FI 查看數據表（PDF） - Unspecified

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EN25F16-100FI

F16-100HIP / 16 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

Unspecified 

EN25F16

EN25F16

16 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

FEATURES

• Single power supply operation

- Full voltage range: 2.7-3.6 volt

• 16 Mbit Serial Flash

- 16 M-bit/2048 K-byte/8192 pages

- 256 bytes per programmable page

• High performance

- 100MHz clock rate

• Low power consumption

- 5 mA typical active current

- 1 μA typical power down current

• Uniform Sector Architecture:

- 512 sectors of 4-Kbyte

- 32 blocks of 64-Kbyte

- Any sector or block can be

erased individually

• Software and Hardware Write Protection:

- Write Protect all or portion of memory via

software

- Enable/Disable protection with WP# pin

• High performance program/erase speed

- Page program time: 1.5ms typical

- Sector erase time: 150ms typical

- Block erase time 800ms typical

- Chip erase time: 18 Seconds typical

• Lockable 512 byte OTP security sector

• Minimum 100K endurance cycle

• Package Options

- 8 pins SOP 200mil body width

- 8 contact VDFN

- 8 pins PDIP

- 16 pin SOP 300mil body width

- All Pb-free packages are RoHS compliant

• Industrial temperature Range

GENERAL DESCRIPTION

The EN25F16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to

256 bytes at a time, using the Page Program instruction.

The EN25F16 is designed to allow either single Sector at a time or full chip erase operation. The

EN25F16 can be configured to protect part of the memory as the software protected mode. The device

can sustain a minimum of 100K program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions 1

or modifications due to changes in technical specifications.

©2004 Eon Silicon Solution, Inc., www.essi.com.tw

Rev. C, Issue Date: 2008/06/23

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