P4C168L 查看數據表（PDF） - Semiconductor Corporation
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P4C168L Datasheet PDF : 14 Pages
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P4C168/P4C168L, P4C169, P4C170
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym Parameter
-12
-15
-20
-25
-35
Unit
Min Max Min Max Min Max Min Max Min Max
tWC Write Cycle Time
12
15
18
20
30
ns
tCW Chip Enable Time to End of Write
12
15
18
20
30
ns
tAW Address Valid to End of Write
12
15
18
20
30
ns
tAS Address Setup Time
0
0
0
0
0
ns
tWP Write Pulse Width
12
15
18
20
30
ns
tAH Address Hold Time
0
0
0
0
0
ns
tDW Data Valid to End of Write
7
8
10
10
15
ns
tDH Data Hold Time
0
0
0
0
0
ns
tWZ Write Enable to Output in High Z
4
5
6
7
13
ns
tOW Output Active from End of Write
0
0
0
0
0
ns
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE (CONTINUED)
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym Parameter
-45
-55
-70
Unit
Min Max Min Max Min Max
tWC Write Cycle Time
45
55
70
ns
tCW Chip Enable Time to End of Write
40
50
60
ns
tAW Address Valid to End of Write
40
50
60
ns
tAS Address Setup Time
0
0
0
ns
tWP Write Pulse Width
40
50
60
ns
tAH Address Hold Time
0
0
0
ns
tDW Data Valid to End of Write
20
20
25
ns
tDH Data Hold Time
3
3
3
ns
tWZ Write Enable to Output in High Z
20
25
30
ns
tOW Output Active from End of Write
0
0
0
ns
Document # SRAM107 REV E
Page 6 of 14
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