TRANSISTOR PLANT semiconductor technical data
Quality System for producing discrete semiconductor devices and integrated circuits conforms
to the requirements of STB ISO 9002-96
78L09AC
CHIP FOR THREE-TERMINAL
POSITIVE VOLTAGE REGULATOR IC
Features:
! Output current in excess of 100 mA
! No external components required
! Internal short circuit current limiting
! Internal thermal overload protection
! Available in either ± 5% selections
Physical Characteristics:
Wafer Diameter ……100 ± 0.5 mm
Wafer thickness ….. 420 ± 20 µm;
Die size …………….. 1.3 x 1.2 mm2 ;
Scribe width ………... 80 µm
Passivation …………. PSG
Pad #
1
2
3
Pad
name
OUT
IN
GND
Description
Output
Input
Ground
Bond Pad (µm)
101 x 101
101 x 101
101 x 101
♦Maximum Ratings (Ta = 25°C)
♦Input Voltage – 30V
♦Operating Junction
Temperature (Tj = 125°C)
Substrate is Common and should be connected to Pad 2
ELECTRICAL CHARACTERISTICS CHIPS ON WAFER (Ta=25°C)
(Vin=15V, Io=40mA, Ci=0.33µF, Co=0.1µF, Tj = + 25°C, unless otherwise noted.)
Characteristic Symbol
Test Condition
Min Max Unit
Output Voltage
Vo
11.5V ≤ Vin ≤ 24V,1mA ≤ Io ≤ 40mA 8.62 9.38
1mA ≤ Io ≤ 70mA
8.62 9.38
V
Line Regulation
ΔVv
11.5V ≤ Vin ≤ 24V
12V ≤ Vin ≤ 24V
158
113
mV
Load Regulation
ΔVi
1mA ≤ Io ≤ 100mA
1mA ≤ Io ≤ 40mA
81
36
mV
Quiescent
Current
Ib
5.8 mA
Quiescent
Current Change
ΔIb
11V ≤ Vin ≤ 23V
1mA ≤ Io ≤ 40mA
1.4
0.09
mA
* The parameters are guaranteed after scribing and chip encasement.
E-mail: TTalanova@transistor.com.by