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78L09AC 查看數據表(PDF) - Integral Corp.

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78L09AC Datasheet PDF : 1 Pages
1
TRANSISTOR PLANT semiconductor technical data
Quality System for producing discrete semiconductor devices and integrated circuits conforms
to the requirements of STB ISO 9002-96
78L09AC
CHIP FOR THREE-TERMINAL
POSITIVE VOLTAGE REGULATOR IC
Features:
! Output current in excess of 100 mA
! No external components required
! Internal short circuit current limiting
! Internal thermal overload protection
! Available in either ± 5% selections
Physical Characteristics:
Wafer Diameter ……100 ± 0.5 mm
Wafer thickness ….. 420 ± 20 µm;
Die size …………….. 1.3 x 1.2 mm2 ;
Scribe width ………... 80 µm
Passivation …………. PSG
Pad #
1
2
3
Pad
name
OUT
IN
GND
Description
Output
Input
Ground
Bond Pad (µm)
101 x 101
101 x 101
101 x 101
Maximum Ratings (Ta = 25°C)
Input Voltage – 30V
Operating Junction
Temperature (Tj = 125°C)
Substrate is Common and should be connected to Pad 2
ELECTRICAL CHARACTERISTICS CHIPS ON WAFER (Ta=25°C)
(Vin=15V, Io=40mA, Ci=0.33µF, Co=0.1µF, Tj = + 25°C, unless otherwise noted.)
Characteristic Symbol
Test Condition
Min Max Unit
Output Voltage
Vo
11.5V Vin 24V,1mA Io 40mA 8.62 9.38
1mA Io 70mA
8.62 9.38
V
Line Regulation
ΔVv
11.5V Vin 24V
12V Vin 24V
158
113
mV
Load Regulation
ΔVi
1mA Io 100mA
1mA Io 40mA
81
36
mV
Quiescent
Current
Ib
5.8 mA
Quiescent
Current Change
ΔIb
11V Vin 23V
1mA Io 40mA
1.4
0.09
mA
* The parameters are guaranteed after scribing and chip encasement.
E-mail: TTalanova@transistor.com.by

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