C13003 查看數據表（PDF） - Continental Device India Limited
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C13003 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
C13003
TO126
Plastic Package
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter ( sus) Voltage
Emitter -Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ Ta=25oC
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Tj, Tstg
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Rth (j-c)
Rth (j-a)
Maximum Lead Temperature for Soldering
TL
Purposes: 1/8" from Case for 5 Seconds.
(1) Pulse Test: Pulse Width= 5ms Duty Cycle =10%
VALUE
600
400
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
40
320
-65 to +150
3.12
89
275
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter ( sus) Voltage
Collector-Cuttoff Current
Emitter-Cuttoff Current
SYMBOL TEST CONDITION
MIN TYP MAX
VCBO IC=1mA, IE=0
600 -
-
VCEO(sus)* IC=10mA, IB=0
ICBO VCB=600V, IE=0
400 -
-
-
- 1.0
VCB=600V, IE=0,TC=100ºC -
- 5.0
IEBO VEB=9V, IC=0
-
- 1.0
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4
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