BF545A 查看數據表（PDF） - Philips Electronics
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BF545A Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF545A; BF545B; BF545C
handbIoDok1, 0ha3lfpage
(µA)
102
10
1
10−1
10−2
10−3
−3
−2
MBB461
−1
0
VGS (V)
VDS = 15 V; Tj = 25 °C.
Fig.13 Drain current as a function of gate-source
voltage; typical values for BF545A.
103
handbIoDok, halfpage
(µA)
102
10
1
10−1
10−2
10−3
−6
−4
MBB458
−2
0
VGS (V)
VDS = 15 V; Tj = 25 °C.
Fig.14 Drain current as a function of gate-source
voltage; typical values for BF545B.
handbIoDok1, 0ha3lfpage
(µA)
102
MBB455
10
1
10−1
10−2
10−3
−8
−6
−4
−2
0
VGS (V)
−102
handbook, halfpage
IG
(pA)
−10
−1
IGSS
−10−1
−10−2
0
MBB454
ID = 10 mA
1 mA
0.1 mA
10
VDG (V)
20
VDS = 15 V; Tj = 25 °C.
Fig.15 Drain current as a function of gate-source
voltage; typical values for BF545C.
ID = 10 mA only for BF545B and BF545C; Tj = 25 °C.
Fig.16 Gate current as a function of drain-gate
voltage; typical values.
1996 Jul 29
8
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